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FP4050 Datasheet PDF
- 2-WATT POWER PHEMT - Data
PRELIMINARY DATA SHEET FP4050 2-WATT POWER PHEMT FEATURES 48 dBm IP3 at 2 GH- 34 dBm P-1dB at 2 GH- 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X) DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide , Indium Gallium Arsenide (AlGaAs, InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes par
Filtronic Compound Semiconductors
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