FMP06N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converter
Fuji Electric
N-CHANNEL SILICON POWER MOSFET - MOSFET
FMP06N60ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC convert