FDW262P
June 2001
FDW262P
20V P-Channel PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
4.5 A, 20 V. RDS(ON) = 47 mΩ @ VGS = 4.5 V RDS(ON) = 65 mΩ @ VGS = 2.5 V RDS(ON) = 100 mΩ @ VGS = 1.8 V RDS(ON) rated for use with 1.8 V logic L