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FDW258P Datasheet PDF
- P-Channel 1.8V Specified PowerTrench MOSFET - MOSFET
FDW258P January 2002 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V). Features 9 A, 12 V. RDS(ON) = 11 mΩ @ VGS = 4.5 V RDS(ON) = 14 mΩ @ VGS = 2.5 V RDS(ON) = 20 mΩ @ VGS = 1.8 V Applications Load switch Motor drive DC, DC con
Fairchild Semiconductor
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