FDW2502P
May 2000 PRELIMINARY
FDW2502P
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Features
4.4 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.057 Ω @ VGS = 2.5 V. Extended VGSS range (±12V) for battery applications. H
FDW2502P
May 2000 PRELIMINARY
FDW2502P
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Features
4.4 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.057 Ω @ VGS = 2.5 V. Extended VGSS range (±12V) for battery applications. H