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FDV303N Datasheet PDF
- N-Channel Digital FET - Data
FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC, DC
Fairchild Semiconductor
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