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FDS9958 Datasheet PDF
- Dual P-Channel MOSFET - MOSFET
FDS9958 Dual P-Channel PowerTrench® MOSFET July 2007 FDS9958 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A RoHS Compliant ® tm General Description These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
Fairchild Semiconductor - Dual P-Channel PowerTrench MOSFET - MOSFET
FDS9958_F085 Dual P-Channel PowerTrench® MOSFET November 2008 FDS9958_F085 Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ Features General Description Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A Qualified to AEC Q101 RoHS Compliant These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance an
Fairchild Semiconductor
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