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FDS8960C Datasheet PDF
- Dual N & P-Channel PowerTrench MOSFET - MOSFET
FDS8960C Dual N & P-Channel PowerTrench® MOSFET August 2005 FDS8960C Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line po
Fairchild Semiconductor
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