FDS5672 N-Channel PowerTrench® MOSFET
July 2005
FDS5672 N-Channel PowerTrench® MOSFET
60V, 12A, 10mΩ Features
rDS(ON) = 10mΩ , VGS = 10V, ID = 12A rDS(ON) = 14mΩ , VGS = 6V, ID = 10A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching