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FDG6301N Datasheet PDF
- Dual N-Channel/ Digital FET - Data
July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features 25 V, 0.22 A continuous, 0.65 A pea
Fairchild Semiconductor
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