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FDG361N Datasheet PDF
- N-Channel 100V Specified PowerTrenchMOSFET - MOSFET
FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrench MOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TS
Fairchild Semiconductor
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