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FDG330P Datasheet PDF
- P-Channel 1.8V Specified PowerTrench MOSFET - MOSFET
FDG330P December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features 2 A, 12 V. RDS(ON) = 110 mΩ @ VGS = 4.5 V RDS(ON) = 150 mΩ @ VGS = 2.5 V RDS(ON) = 215 mΩ @ VGS = 1.8 V Applications Battery management Load switch Low gate charge High performance trench technology for extremely
Fairchild Semiconductor
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