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FDG311N Datasheet PDF
- N-Channel 2.5V Specified PowerTrench MOSFET - MOSFET
FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V. L
Fairchild Semiconductor
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