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FDD4141 Datasheet PDF
- P-Channel PowerTrench MOSFET - MOSFET
FDD4141 P-Channel PowerTrench® MOSFET July 2007 FDD4141 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ Features Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A High performance trench technology for extremely low rDS(on) RoHS Compliant tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offe
Fairchild Semiconductor - P-Channel PowerTrench MOSFET - MOSFET
FDD4141_F085 P-Channel PowerTrench® MOSFET November 2013 FDD4141_F085 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ Features Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A High performance trench technology for extremely low rDS(on) Qualified to AEC Q101 RoHS Compliant General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimi
Fairchild Semiconductor
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