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FDC8884 Datasheet PDF
- N-Channel Power Trench MOSFET - MOSFET
FDC8884 N-Channel Power Trench® MOSFET January 2012 FDC8884 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Fairchild Semiconductor
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