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FDC699P Datasheet PDF
- P-Channel 2.5V PowerTrench MOSFET - MOSFET
FDC699P January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Applications Battery management Load Switch Battery protection Features 7 A, 20 V RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 30 mΩ @ VGS = 2.5 V High performance trench
Fairchild Semiconductor
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