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FDB28N30 Datasheet PDF
- MOSFET, Transistor - MOSFET
FDB28N30 N-Channel MOSFET FDB28N30 N-Channel MOSFET 300V, 28A, 0.129Ω Features RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A Low gate charge ( Typ. 39nC) Low Crss ( Typ. 35pF) Fast switching 100% avalanche tested Improved dv, dt capability RoHS compliant June 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to m
Fairchild Semiconductor
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