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FDB2614 Datasheet PDF
- N-Channel PowerTrench MOSFET - MOSFET
FDB2614 200V N-Channel PowerTrench MOSFET November 2006 FDB2614 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. tm Description 62A, 200V, RDS(on) = 22.9mΩ @VGS = 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on)
Fairchild Semiconductor
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