|
FCD4N60 Datasheet PDF
- N-Channel MOSFET - MOSFET
FCD4N60 600V N-Channel MOSFET FCD4N60 600V N-Channel MOSFET Features 650V @TJ = 150°C Typ. RDS(on) = 1.0Ω Ultra low gate charge (typ. Qg = 12.8nC) Low effective output capacitance (typ. Coss.eff = 32pF) 100% avalanche tested SuperFET Description October 2006 TM SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced t
Fairchild Semiconductor
|
|
Please enter the part name