D44H8 - D44H11 D45H8 - D45H11
Complementary power transistors
Features
- Low collector-emitter saturation voltage - Fast switching speed
Applications
- Power amplifier - Switching circuits
Description
The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications.
.
TAB
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
D44H8
D44H8
D44H11
D44H11
D45H8
D45H
STMicroelectronics
NPN Power Amplifier - Amplifier
D44H8 , NZT44H8
Discrete POWER & Signal Technologies
D44H8
NZT44H8
C
B
E C E C
TO-220
SOT-223
B
NPN Power Amplifier
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4Q.
Absolute Maximum Ratings*
Symbol
VCEO IC TJ, Tstg Collector-Emitter Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60 8.0 -55 to +150
Units
V A °C
Operating and Storage Junction Temperature Range