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CS25N06B3 Datasheet PDF
- Silicon N-Channel Power MOSFET - MOSFET
Silicon N-Channel Power MOSFET CS25N06 B3 ○R General Description： CS25N06 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 60 25 50 28 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard
Huajing Microelectronics
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