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CS12N65F Datasheet PDF
- N-Channel MOSFET - MOSFET
BRF12N65(CS12N65F) N-Channel MOSFET, N MOS 晶 管 用途: 用于高 源， 子 流器，UPS 源。 Purpose: High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS. 特点:低 荷,低反 容, 速度快。 Features: Low gate charge，Low Crss，Fast switching. 限 , Absolute maximum ratings(Ta=25℃) 符 位 Symbol Rating Unit VDSS 650 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.6 A IDM 48 A VGSS ±30 V EAS 880 mJ EAR 25 mJ
BLUE ROCKET ELECTRONICS - Silicon N-Channel Power MOSFET - MOSFET
Huajing Discrete Devices ○R Silicon N-Channel Power MOSFET CS12N65F A9H General Description： CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 650 12 55 0.54 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F,
Huajin Discrete Devices
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