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CP285 Datasheet PDF
- Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip - Transistor
PROCESS CP285 Power Transistor NPN - Silicon Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 105 x 105 MILS 9.5 MILS 32 x 22 MILS 33 x 24 MILS Al - 45,000 Ti, Ni, Ag - (3000 , 10,000 , 10,000 ) GEOMETRY GROSS DIE PER 5 INCH WAFER 1,486 PRINCIPAL DEVICE TYPES MJE13005 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.c
Central Semiconductor
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