|
CP208 Datasheet PDF
- Power Transistor NPN - Amp/Switch Transistor Chip - Transistor
PROCESS Power Transistor CP208 Central TM NPN - Amp, Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 2,630 PRINCIPAL DEVICE TYPES CJD31C MJE182 TIP31C EPITAXIAL BASE 66 X 66 MILS 12.5 ± 1.0 MILS 12 X 24 MILS 11 X 14 MILS Al - 50,000 Cr, Ni, Ag - 16,000 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel:
Central Semiconductor - TRANSHIELLD CP2000 SERIES - Data
ETC
|
|
Please enter the part name