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BUZ307 Datasheet PDF
- N-Channel MOSFET Transistor - MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification BUZ307 DESCRIPTION ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application APPLICATIONS ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 800 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 3 A Total Dissipation@TC=25℃ 75 W
Inchange Semiconductor - SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) - Transistor
BUZ 307 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 307 VDS 800 V ID 3A RDS(on) 3Ω Package TO-218 AA Ordering Code C67078-S3100-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3 Unit A ID IDpuls 12 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 8 mJ ID = 3 A, VDD = 50 V, RGS =
Siemens Semiconductor Group
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