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BUZ271 Datasheet PDF
- SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) - Transistor
BUZ 255 Not for new design SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 255 VDS 200 V ID 13 A RDS(on) 0.24 Ω Package TO-220 AB Ordering Code C67078-S1406-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 13 Unit A ID IDpuls 52 TC = 31 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13 9 mJ
Siemens Semiconductor Group
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