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BUZ173 Datasheet PDF
- SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) - Transistor
BUZ 173 SIPMOS ® Power Transistor P channel Enhancement mode Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 173 VDS -200 V ID -3.6 A RDS(on) 1.5 Ω Package TO-220 AB Ordering Code C67078-S1452-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -3.6 Unit A ID IDpuls -14 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 200 mJ ID = -3.6 A, VDD = -25 V, RGS = 25 Ω L = 23 mH, Tj = 25 °C Gate source voltage Power dissipation
Siemens Semiconductor Group
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