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BUZ172 Datasheet PDF
- SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) - Transistor
BUZ 172 SIPMOS ® Power Transistor P channel Enhancement mode Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 172 VDS -100 V ID -5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1451-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -5.5 Unit A ID IDpuls -22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 170 mJ ID = -5.5 A, VDD = -25 V, RGS = 25 Ω L = 8.4 mH, Tj = 25 °C Gate source voltage Power dissipation
Siemens Semiconductor Group
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