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BUZ17 Datasheet PDF
- main ratings - Data
Siemens Semiconductor Group - SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) - Transistor
BUZ 171 SIPMOS ® Power Transistor P channel Enhancement mode Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 171 VDS -50 V ID -8 A RDS(on) 0.3 Ω Package TO-220 AB Ordering Code C67078-S1450-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -8 Unit A ID IDpuls -32 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 70 mJ ID = -8 A, VDD = -25 V, RGS = 25 Ω L = 1.1 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Pto
Siemens Semiconductor Group
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