|
BUY56 Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUY56 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V@ IC= 7A APPLICATIONS ·Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 250 V VCES Collector-Emitter Voltage 250 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-
Inchange Semiconductor - Trans GP BJT NPN 250V 15A 3-Pin(2+Tab) TO-3 - Data
New Jersey Semiconductor
|
|
Please enter the part name