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BUY24 Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUY24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V@ IC= 5A APPLICATIONS ·Designed for use switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6V IC Collector Current-Conti
Inchange Semiconductor - SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR - Transistor
BUY24 MECHANICAL DATA Dimensions in mm (inches) SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) FEATURES CECC SCREENING OPTIONS 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 22.23 (0.875) max. SPACE QUALITY LEVELS OPTIONS JAN LEVEL SCREENING OPTIONS 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
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