|
BUX78 Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BUX78 DESCRIPTION ·Contunuous Collector Current-IC= -5A ·Collector Power Dissipation- : PC= 40W @TC= 25℃ ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) APPLICATIONS ·Designed for use in switching regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VE
Inchange Semiconductor - Bipolar PNP Device - Data
BUX78 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar PNP Device. VCEO = 80V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 (0.1
Seme LAB
|
|
Please enter the part name