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BUW51 Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUW51 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain APPLICATIONS ·Designed for use in general purpose power amplifier applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Ba
Inchange Semiconductor - NPN MULTI-EPITAXIAL POWER TRANSISTOR - Transistor
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