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BUL44 Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL44 DESCRIPTION ·Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.6V(Max) @ IC= 1.0A APPLICATIONS ·Designed for use in 220V line operated switchmode power Supplies and electronic light ballasts. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitte
Inchange Semiconductor - POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS - Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL44, D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44, BUL44F have an applications specific state of the art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage, high speed transistors offer the following: Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain
Motorola Inc
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