MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current Continuous
Symbol v CEO v CBO VEBO
"C
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
Thermal Resistance Junction to Ambient
R 0JA
Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 40 75
6.0 100
Max, 350
2.8 150 357
Unit Vdc Vdc Vdc
mAdc
Unit
mW
mW, °C
°C °C, W
ELECTRICAL CHARAC
Motorola Semiconductors
NPN Silicon Switching Transistors - Transistor
SMD Type
TransistIoCrs
NPN Silicon Switching Transistors
BSS79,BSS81
Features
High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperatu