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BSP149 Datasheet PDF
- SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) - Transistor
SIPMOS® Small-Signal Transistor BSP 149 q q q q q q q VDS 200 V ID 0.48 A RDS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1 G 2 D 3 S 4 D BSP 149 SOT-223 BSP 149 Q67000-S071 E6327: 1000 pcs, reel Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 28
Siemens Semiconductor Group - SIPMOS Small-Signal-Transistor - Transistor
BSP149 SIPMOS® Small-Signal-Transistor Features N-channel Depletion mode dv , dt rated Product Summary V DS R DS(on),max I DSS,min 200 3.5 0.14 V Ω A SOT-223 Type BSP149 Package SOT-223 Ordering Code Q67000-S071 Tape and Reel Information E6327: 1000 pcs, reel Marking BSP149 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.66 A, V DS=160 V, di , dt
Infineon Technologies AG
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