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BSH121 Datasheet PDF
- N-channel enhancement mode field-effect transistor - Transistor
BSH121 N-channel enhancement mode eld-effect transistor Rev. 01 14 August 2000 Product speci cation 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323. 2. Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Logic level translator. c c 4. Pinning information Tab
NXP Semiconductors
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