N-channel enhancement mode field effect transistor - Transistor
BSH114
N-channel enhancement mode eld effect transistor
Rev. 01 09 November 2000
M3D088
Product speci cation
1. Description
N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH114 in SOT23.
2. Features
s s s s TrenchMOS™ technology Low on-state resistance Very fast switching Surface mount package.
3. Applications
s Relay driver s DC to DC converter s General purpose switch.
c c
4. Pinning information
Table 1: P