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BSH112 Datasheet PDF
- N-channel enhancement mode field-effect transistor - Transistor
BSH112 N-channel enhancement mode eld-effect transistor Rev. 01 25 August 2000 M3D088 Product speci cation 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH112 in SOT23. 2. Features s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes. 3. Applications c c s Relay driver s High speed line driver s Logic le
NXP Semiconductors
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