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BSH108 Datasheet PDF
- N-channel enhancement mode field-effect transistor - Transistor
BSH108 N-channel enhancement mode eld-effect transistor Rev. 02 25 October 2000 M3D088 Product speci cation 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. c c 4. Pinning
NXP Semiconductors
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