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BFS20 Datasheet PDF
- NPN Silicon Plastic-Encapsulate Transistor - Transistor
Elektronische Bauelemente BFS20 NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free FEATURES High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation PCM : 0.25 W Collector Current ICM : 25mA Collector-base voltage V(BR)CBO : 30 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C 1 2 3 A L 3 Top View 12 VG Collector 3 1 Base 2 Emitter BS C D H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.2
SeCoS - NPN Transistor - Transistor
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) BFS20 FEATURES * Power dissipation PCM : 0.25 W (Tamb=25OC) * Collector current ICM : 0.025 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS
RECTRON
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