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BFR93 Datasheet PDF
- RF TRANSISTOR - Transistor
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCEO VCBO v EBO ic THERMAL CHARACTERISTICS Characteristic Symbol *Totai Device Dissipation, T, \ = 25°C Derate above 25°C PD Storage Temperature Tstg 'Thermal Resistance Junction to Ambient RftJA Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 12 15 2.0 25 Max 350 2.8 150 357 Unit . Vdc Vdc Vdc mAdc Unit mW mwrc °C °C, W BFR93.S CASE 318-02,
Motorola Semiconductors - NPN 5 GHz wideband transistor - Transistor
DISCRETE SEMICONDUCTORS DATA SHEET BFR93 NPN 5 GH- wideband transistor Product speci cation Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product speci cation NPN 5 GH- wideband transistor FEATURES Very low intermodulation distortion High power gain Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency. APPLICATIONS RF wideband amplifiers and oscillators. QUICK REFERENC
NXP Semiconductors
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