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BF909WR Datasheet PDF
- N-channel dual-gate MOS-FET - Gate
DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product speci cation Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product speci cation N-channel dual-gate MOS-FET FEATURES Specially designed for use at 5 V supply voltage Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GH- Superior cross-modulation performance during AG
NXP Semiconductors
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