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BF908WR Datasheet PDF
- N-channel dual-gate MOS-FET - Gate
DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary speci cation File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Preliminary speci cation N-channel dual-gate MOS-FET FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS VHF and UHF applications with 12 V supply voltag
NXP Semiconductors
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