DISCRETE SEMICONDUCTORS
DATA SHEET
BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs
Product speci cation Supersedes data of 1999 Feb 01 1999 May 14
Philips Semiconductors
Product speci cation
N-channel dual gate MOS-FETs
FEATURES Specially designed for use at 5 V supply voltage Short channel transistor with high transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GH- Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF
NXP Semiconductors
N-channel dual gate MOS-FETs - Gate
DISCRETE SEMICONDUCTORS
DATA SHEET
BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs
Product speci cation Supersedes data of 1999 Feb 01 1999 May 14
Philips Semiconductors
Product speci cation
N-channel dual gate MOS-FETs
FEATURES Specially designed for use at 5 V supply voltage Short channel transistor with high transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GH- Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF