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BF1012 Datasheet PDF
- N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network) - MOSFET
BF 1012 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 12V Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1012 Marking Ordering Code Pin Configuration MYs Q62702-F1487 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1, gate 2 peak source current Gate 1 (external biasin
Siemens Semiconductor Group - N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) - MOSFET
BF 1012S Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 5V Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1627 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1012S NYs Maximum Ratings Parameter Drain-source voltage Symbol Value 16 25 10 3 200 -55 ...+150 150 Unit V mA V mW °C VDS ID ±I G1, 2SM +VG1SE Continu
Siemens Semiconductor Group
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