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BDV66C Datasheet PDF
- Silicon PNP Darlington Power Transistor - Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67, A, B, C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDV66 Collector-Base Voltage BDV66A BDV66B BDV66C BDV66 Collector-Emitter Voltage BDV66A BDV66B BDV66C VEB
Inchange Semiconductor - PNP Darlington Power Transistor - Transistor
BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C Value -
Comset Semiconductors
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