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BDT87F Datasheet PDF
- Silicon NPN Power Transistors - Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to Type BDT82F, 84F, 86F, 88F APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT81F BDT83F VCBO Collector-Base Volt
Inchange Semiconductor
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