|
BDT87 Datasheet PDF
- Silicon NPN Power Transistors - Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82, 84, 86, 88 APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT81 BDT83 VCBO Collector-Base Voltage BDT85
Inchange Semiconductor - SILICON POWER TRANSISTOR - Transistor
NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTORS The BDT81 BDT83 BDT85 BDT87 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. PNP complements are BDT82 BDT84 BDT86 BDT88. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.t.net, Value BDT81 BDT83 BDT85 BDT87 BDT81 BDT83 BDT85 BDT87 60 80 100 120 60 80 100 120 7 15 20 4 125 150 -65 to +150 Unit VCEO C
Comset Semiconductors
|
|
Please enter the part name