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BDT86 Datasheet PDF
- Silicon PNP Power Transistors - Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 ·Complement to Type BDT81, 83, 85, 87 APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDT82 BDT84 VCBO Collector-Base Voltage B
Inchange Semiconductor - SILICON POWER TRANSISTOR - Transistor
PNP BDT82 BDT84 BDT86 BDT88 SILICON POWER TRANSISTORS The BDT82 BDT84 BDT86 BDT88 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.t.net, Value BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 -60 -80 -100 -120 -60 -80 -100 -120 -7 -15 -20 -4 125 150 -65 to +150 U
Comset Semiconductors
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